60 GHz power amplifier using PHEMT

A millimeter wave power amplifier has been developed using a 0.15- mu m, T-gate pseudomorphic high electron mobility transistor (HEMT). It utilized a novel low-loss planar combiner. The performance obtained was 715-mW output power with more than 13-dB linear gain at 60 GHz, the highest results reported in the literature to date. These state-of-the-art results were attributed to the excellent device and combiner performance. The basic components as well as details of the power module are outlined. >