Integrated self-steered silicon detector array

A monolithic integrated surface-oriented Schottky-barrier diode is developed. The diode uses active n-on-n+ and contact n+ regions doped on a high-resistivity silicon substrate using phosphorus ion implantation and is incorporated into a microstrip patch constructed over a patterned SiO2 layer. The process technology developed is precise, simple, low cost and suitable for mass production. The resulting integrated detector has a planar configuration and is shown to have a sensitivity of 1.83 mV/mW/cm2 at 14.95 GHz. The effects of device annealing on microwave performance are examined and it is shown that an increase of (S + N)/N ratio for the detector of 6 dB can be achieved after device annealing. The application of the all-silicon detector as a self-tracking receiver is also shown.