Sheet Resistance of Ion Implanted Si(100) at Various Doses, Energies and Beam Currents

Simulations were performed using Crystal TRIM software under the same conditions used by previous researchers in order to clarify the mechanism that determines sheet resistance various doses, energies and beam currents. The results showed that the peak of the depth profile (Rp) in the same sample gradually shifts inward and damage increases near the surface as the energy increases for equal dose of implanted into Si(100) energies of 5, 10, and 15 keV. From a theoretical calculation of B+ ion implantation processes at energy of 20 keV using parameters that correspond to 1 mA and 7 mA beam currents with the same dose of , it was found that the higher beam currents resulted in more damage near the surface (, ) and beam currents (0.8 mA, 8 mA), more damage was produced at larger doses and higher current. Thus, sheet resistance at the surface was reduced by the intensified damage from increases in beam energy, dose and beam currents.