Anodic bonding of silicon onto glass by ion-cut technique and their characterization using high resolution X-ray diffraction studies

Abstract Anodic bonding of single crystal silicon wafer with glass and subsequent splitting of the silicon wafer is done by ion-cut technique that involves proton bombardment at desired energies at a dose level > 5 × 10 16  cm − 2 and then subjected to the bond pair for heat treatment at ∼ 550 °C. Details of the bonding and splitting processes have been discussed in the present study. The high resolution X-ray diffractometry studies have been performed and found that transferred single crystalline thin silicon layer has less crystalline perfection than the original wafer. It suggests that some improvement is still required in the ion-cut technique to improve the crystalline quality of the transferred layer before going to be used for the device applications.