Simulation of InGaAs/InAlAs avalanche photodetectors

In this paper, we report 2D simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodetectors (SAGCM APDs), study the effect of multiplication layer parameters on the operating voltage ranges of APD. We found that with the change of the thickness and doping concentration of multiplication layer, the change of the punchthrough voltage, and the breakdown voltage can be obviously observed.