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Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol. 35 065009)
Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol. 35 065009)
2021
Archit Dhingra
P.V. Galiy
Lu Wang
Nataliia S. Vorobeva
Alexey Lipatov
Ángel Torres
T. M. Nenchuk
Simeon Gilbert
Alexander Sinitskii
Andrew J. Yost
Wai-Ning Mei
Keisuke Fukutani
Jia-Shiang Chen
Peter A. Dowben
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