Impedance Spectroscopy as a Powerful Tool for Better Understanding and Controlling the Pore Growth Mechanism in Semiconductors

This work shows new results toward a better understanding of macropore growth in semiconductors by using in situ FFT impedance spectroscopy. A new interpretation of the voltage impedance is proposed. In particular, the pore quality could be quantified for the first time in situ, especially by extracting the valence of the electrochemical process. The study paves the way toward an automatized etching system where the pore etching parameters are adjusted in situ during the pore etching process.