Different morphology aspects of n-type porous silicon

Abstract Four morphology types of pore structures, that were formed with optimal values of parameters of the system consisted of silicon wafer and electrolyte mixture while changing either temperature or wavelength of initializing irradiation were discovered. The results of optical and electrophysical measurements and physical-chemical analysis are discussed. The assumption concerning possible self-similarity of morphologies of both structures: macro- and micropores is put forward. The analysis of general regularities testifies to existence of the universal fractal mechanism of pores formation process.