An Investigation of the Behaviour of a-Si:H Thin Film Transistors Fabricated With Different Proximity Recovery Layer Doping Levels

Experiments have been carried out on inverted staggered amorphous silicon (a-Si:H) thin film transistors (TFTs). Depending on the voltage stressing conditions the electronic characteristics of these devices tend to shift with time [1]. To slow these changes down, and to speed up the recovery of the TFT, a lightly doped compensation or proximity recovery layer (PRL) has been placed in close proximity to the active layer of the undoped a-Si:H [2]. The effects of varying the dopant concentrations in the PRL have been studied by comparing the PRL TFTs with conventional control TFTs containing no PRL.