反应前驱物中n(S)∶n(Cd)对CdS薄膜结构及发光特性的影响

CdS thin film was prepared by chemical bath deposition at different n(S)∶n(Cd) using the precursors of CdCl2·H2O,CS(NH2)2,NH4Cl,NH3·H2O and deionized water.The surface morphology,structure and optical properties of all the samples have been analyzed by scanning electron microscopy,X-ray diffraction,transmission and photoluminescence(PL) spectra.The results indicated that spherical particle like morphology and cubic structure CdS thin films were obtained at n(S)∶n(Cd) greater than or equal 3∶1.All CdS thin films with a close stoichiomerty S/Cd=0.91 were Cd-rich belong to n-type semiconductor.The absorption edge of CdS films was about 450 nm,the optical transmittance was more than 70% in the wavelength range from 510 to 2 500 nm.Intensity of the photoluminescence peak at 500 nm is stronger.