Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier

We present an efficient approach to the temperature-dependent physics-based variability analysis of electron devices in Large Signal (LS) nonlinear conditions. The method extends, with negligible numerical overhead, the Green’s Function (GF) approach, already developed for the device LS noise and technological sensitivity, and allows to calculate the LS device response to the temperature variation from a nominal, “cold” condition with concurrent variations of technological parameters. As a demonstrator we show the T-dependent TCAD simulations of a FinFET-based class A power amplifier against device heating in conjunction with doping variations of the channel contact regions. More than 1 dB output power loss with 50 K temperature heating is demonstrated, while doping variations further affect the PA 1 dB compression point with a 1 dB input power spread.