Design of monolithic 8.0–8.4GHz digitally controlled 5-bit phase shifter using MESFET process

Design and measurements of a 5-bit monolithic digital phase shifter in frequency band of 8.0-8.4 GHz is described in the paper. 0.7 μm gate length GaAs MESFET process technology is utilized as switching device and Phase shifting networks are realized using MIM capacitors and spiral inductors. The MMIC is fabricated in chip area of 5.5 × 2.4 mm 2 on a 200 μm thick, 3” dia GaAs wafer. Excellent phase linearity is exhibited over differential phase range of 0-360° in digitally controlled steps of 11.25° during measurements.