A resistive memory and a method of preparing

The present invention discloses a method for preparing a resistive memory and belonging CMOS VLSI (ULSI) technology field. The resistive memory comprising a substrate, an insulating layer and a bottom electrode disposed on the substrate layer and the first spacer layer provided with a resistive film on the bottom electrode, the separation layer is formed groove-shaped device region, said first the resistive film layer deposited on the spacer layer within the groove is U-shape, a vacuum barrier between the first resistive film layer and the outer wall of the groove sidewall, a second layer resistive film overlying the first layer the resistive film and the release layer enclosing the vacuum release layer, a top electrode disposed on the second layer resistive film. The present invention is incorporated in the conventional manufacturing process based on the sidewalls of RRAM preparation and etching processes, more conveniently prepared vacuum insulation layer, effectively suppressing oxygen exchange with the resistive means surrounding insulation material, and naturally-layer structure, thereby greatly improve retention characteristic resistive device, durability and consistency.