An integrated circuit device comprising capacitor electrodes thereon insulating spacers and methods for making the same

An integrated circuit device comprising: a substrate (500, 600); a first on the substrate (500, 600) provided capacitor electrode (505 ', 605'), wherein the first capacitor electrode (505 ', 605') comprises an electrode wall extending away from the substrate (500, 600) extends; a at the end portion of the electrode wall, which from the substrate (500, 600) dista, provided insulating spacer (508 ', 608'), wherein portions of the electrode wall between the substrate (500, 600) and said insulating spacer (508 ' , 608 ') free (of the insulating spacer 508', 608 '), respectively; a capacitor dielectric layer on the first capacitor electrode (508 ', 608'); and a second capacitor electrode which is provided opposite to the capacitor dielectric layer of the first capacitor electrode (505 ', 605'), said insulating spacer (508 ', 608') respectively on outer and inner surfaces of the first capacitor electrode (505 ', 605') and between the first and second capacitor electrode (505 ', 605') are formed and a thickness of the insulating spacer (508 ', 608') between the first and the second capacitor electrode is larger than a thickness of the dielectric ...