Thin-film transistor device and a manufacturing method thereof, an organic el display device, and organic el display device

Thin-film transistor element is formed in the first opening configured by surrounding the partition wall. Source electrode, the drain electrode is stacked above the gate electrode, are arranged spaced apart from each other in a direction intersecting the stacking direction. Insulating layer is interposed between the gate electrode and the source electrode and the drain electrode. Semiconductor layer, at the bottom of the first opening is formed on the gap, and a source electrode and a drain electrode between the source electrode and the drain electrode, in intimate contact to the source and drain electrodes. Lyophilic layer on the insulating layer at the bottom of the first opening, the source electrode and the drain electrode are formed separately, have a high lyophilic property than the insulating layer, in plan view the bottom of the first opening in the case, the center position of the surface area, apart on one side from the center position of the area at the bottom of the first opening.