Hot carrier effects in short MOSFETs at low applied voltages

In this paper a quantitative study of the electron energy distribution in silicon devices at low applied voltages is carried out by means of Monte Carlo simulations including the main mechanisms involved in the process of carrier heating. We present a clear-cut interpretation of the build up of the electron distribution at energies higher than that provided by the applied electric field (qV, V being the total voltage drop). Electron-electron interaction is analyzed and shown to be an effective process for the enhancement of the high-energy electron population.