Forming gate electrodes dual workfunction

A method zumda manufacture of gate electrodes with a dual work function CMOS semiconductor structure, in which a boron penetration into the channel region, and a boron depletion near the gate oxide is avoided, comprising the steps of: a) forming a gate oxide layer (10) over a channel region of an nMOS and a channel of a PMOS region; b) forming an undoped polysilicon layer (11) over the gate oxide layer; c) masking the pMOS region, forming an a-Si region (12) over the NMOS region by means of a first implantation of Ge or Si ions, and implanting arsenic solely in the a-Si region; d) masking of the nMOS region, which is formed by step c), forming another a-Si region (12) over the pMOS area by a second implantation of Ge or Si ions and implanting boron exclusively in the other a Si region; e) laser annealing the NMOS and PMOS region for a sufficient period of time and at a power level which is sufficient to melt at least a portion of the a-Si, but not sufficient to melt ...