InGaAs and Ge MOSFETs with high κ dielectrics

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities of states (D"i"t's) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850^oC, a CET of 2.1nm (a CET of 0.6nm in GGO), and a well tuning of threshold voltage V"t"h with metal work function. Device performances in drain currents of >1mA/@mm, transconductances of >710@mS/@mm, and peak mobility of 1600cm^2/Vs at 1@mm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV-Al"2O"3/GGO gate dielectrics and ALD-Al"2O"3. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800@mA/@mm and peak transconductance of 420@mS/@mm at 1@mm gate-length.