Crystal field effects in the electrical resistivity of NdIn3 and NdSn3

Abstract The experimentally determined magnetic contributions to the total resistivity of NdIn 3 and NdSn 3 compounds have been compared with those calculated in the first Born approximation. For NdSn 3 the satisfactory agreement between theory and experiment was obtained. In the case of NdIn 3 the coincidence was worse and therefore it was not possible to judge unmistakably about the specific CEF level sequence.