In1−xMnxSb—a narrow-gap ferromagnetic semiconductor

A narrow-gap ferromagnetic In1−xMnxSb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In1−xMnxSb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures TC ranging up to 8.5 K. The observed values of TC agree well with the existing models of carrier-induced ferromagnetism.