Old Web
English
Sign In
Acemap
>
Paper
>
Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma
Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma
2010
Waldemar Oleszkiewicz
J. Gryglewicz
Bogdan Paszkiewicz
Regina Paszkiewicz
Adam Szyszka
Maria Ramiaczek-Krasowska
Andrzej Stafiniak
Marek Tłaczała
Keywords:
Surface roughness
Gallium nitride
Etching
Heterojunction
Reactive-ion etching
Logic gate
Optoelectronics
BCL3
Plasma
Physics
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]