Carrier dynamics in InGaAsP MQW laser structures

We investigate vertical carrier transport, carrier relaxation and capture in three In 1-x Ga x As y P 1-y multiple-quantum-well lasers structures emitting at 1.3 and 1.55 micrometers at room temperature using time resolved photoluminescence. In the initial regime following the excitation, high effective carrier temperatures T c different from the lattice temperature T L equals 77 K are reported. A significant signature of transport and capture is observed with characteristic times of approximately 10 ps and approximately 12 ps respectively.