Strength and plasticity of amorphous silicon oxycarbide

Abstract Amorphous SiOC films were synthesized by magnetron sputtering at room temperature with/without radio frequency (RF) bias and further improved in terms of mechanical properties by ion irradiation. As-deposited SiOC films without RF bias exhibit catastrophic failure at a low stress and strain, which is ascribed to microstructural heterogeneities associated with the formation of voids during deposition, as evidenced by transmission electron microscopy. Ion irradiation unifies microstructure accompanied with eliminating the voids, resulting in a simultaneously increase in strength and plasticity (ultimate strength of 5–7 GPa and the strain to shear instability of over 20%). Homogeneous microstructures are demonstrated to ensure high strength and plasticity of amorphous SiOC, as observed in SiOC that are deposited with RF-bias. Thus, microstructural homogeneous amorphous SiOC exhibits intrinsically high strength and plasticity, making them promising as structural engineering materials.