Preparation of Reactive Magnetron Sputtered Zr-Al-N Films and Their Properties

Zr-Al-N films have been produced by using the RF magnetron sputtering process. Films sputtered reactively from a (Zr, Al) composite target have been deposited in various nitrogen flow. The film properties, such as atomic composition, electrical and optical properties as a function of nitrogen flow, are investigated. It is found that the film properties can be widely changed from metal to semiconductorlike by increasing nitrogen flow. The further researches are required such as structural analysis and the effect on the resistance against oxidation of Zr-Al-N films at high temperatures.