Quantum and Random Impurity Effects in Ultra-Short MOSFET

This paper presents some theoretical features related to the physical operation of aggressively downscaled MOSFET. The problem of random dopant fluctuations is studied by means of 3D Monte Carlo simulation with a new model of electron-ion interaction suited for discrete dopants. Quantum effects as the direct tunneling gate leakage and the channel quantization are also investigated by means of Poisson/Schrodinger solver and device Monte Carlo simulator.