Experimental and simulation study of Cu-Al NOL for CCP-CPP-GMR spin-valve

In this study, we introduce the energy application such as annealing on the Al as deposition state and from molecular dynamics (MD) simulations, the details of atomic configurations for Al atoms on Cu(l 11) surface were investigated. Using this method we can control the size of the Al grains, and, hence, the CCP phenomena can be controlled and improved.The current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect has been greatly attracted for its application to ultra high density storage devices.