The effects of high doping on the I-V characteristics of a thin-film SOI MOSFET
1998
Modifications of the Ortiz-Conde et al., model which take into account either apparent or physical bandgap narrowing have been presented. The influence of high doping effects is investigated by means of a comparison of the modified models with their original, version for various device parameters. It is shown that the inclusion of bandgap narrowing is essential for accurate simulation of I-V characteristics of a SOI MOSFET in the subthreshold and near-threshold regions. A new analytical model with bandgap narrowing has been derived for the subthreshold region.
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