Recent progress in cell-projection electron-beam lithography

This paper reviews and introduces recent methods for enhancing the performance of cell-projection lithography and describes various useful applications of this type of lithography. To increase the throughput, the area of the e-beam mask that is available for cell apertures was four-times increased. For enhanced lithographic resolution, the resolution in cell-beam measurement was enhanced. The method that uses transmitted electrons through a very fine hole in the stencil was improved. Much higher resolution is achieved compared as before. Moreover, several applications of cell-projection lithography were demonstrated to show its advantages. They included lithography in the fabrication of photo-masks and magnetic head devices those use plural cell apertures.