Integrated circuit device and method of manufacturing the same

An integrated circuit element is integrally connected to the semiconductor structure, and the connection terminal being connected to the TSV structure and, TSV structures passing through the semiconductor structure, the plate-like cap pingbu covering the upper surface of the connection terminal, the plate-like cap pingbu connector It includes a metal capping film including a wedge-shaped capping that covers part of the side wall. To form a metal film is capped, while applying a current of a pulse-type electrolyte, the connectors on the metal strike performs electrolytic plating is brought into contact with the plating liquid.