The characterization of anodic fluoride films on Hg1−xCdxTe and their interfaces

A novel anodic fluoridization process for forming native fluoride films on Hg1−xCdxTe is described. As in the case of the anodic oxide, the anodic fluoride grows in two steps: a dissolution–precipitation step is followed by a bulk growth. Anodic fluorides free of oxygen are grown from nonaqueous solutions. The presence of water causes the growth of films containing both fluorine and oxygen, whereas a low hydroxyl ion concentration causes the growth of anodic oxide alone. However, its electrical behavior is different from that of anodic oxide grown from fluoride‐free baths. The results of Auger electron spectroscopy analysis indicate that the anodic fluoride is composed of cadmium fluoride in a matrix of tellurium, cadmium, and mercury. The fluoride is homogeneous and has a relatively abrupt dielectric–semiconductor interfacial transition, free of contaminants. Metal–insulator–semiconductor devices containing a fluoride film and evaporated ZnS have been fabricated and characterized. By choosing an appropri...