Depth-selective structural analysis of thin films using total-external-reflection x-ray diffraction

Total-external-reflection (TER) x-ray diffraction is the depth-sensitive technique for evaluating layered structures, including epitaxial heterostructures, ion-doped bulk crystals and several quantum-well structures. This technique can control the depth of observation by changing both incident and exit angles of x-rays from the surface. In this review, the principle of the TER technique and measurement apparatus are briefly described, and applications of layered-semiconductor samples evaluated using the TER technique are introduced.