Variation of the Efficiency of GaN Junctionless FinFET based Boost Converter with Subthreshold Swing as a Unified Device Parameter

We enumerate the subthreshold swing of a GaN (junctionless FinFET) switching device for wide variation in device parameters and temperature, generating around 120 discrete data points in parameter space. The subthreshold swing (SS) can be considered a unified measure of gate control, containing the effect of all the above parameters. Extracted SS values cover a wide area in the distribution space from 222mV/decade towards the ideal one and produces a population standard deviation $(\sigma)$ of 32.24mV/decade. We find that as such it relates directly to the efficiency of a low-voltage boost converter with continuous conduction mode (CCM) closed-loop control (CLC) using the above GaN switch.