UV/ozone-process-assisted low-temperature SnO 2 thin-film transistors

We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO 2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO 2 TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm 2 /Vs, which is more than 40 times higher than the field-effect mobility of SnO 2 TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×10 5 and 2.09 V/dec, respectively.