Degradation mechanism understanding of NLDEMOS SOI in RF applications.

The distinct channel hot-carrier (CHC) degradation mechanisms have been observed in NLDEMOS processed from a SOI CMOS technology. The charge-pumping (CP) technique has evidenced the larger hot-hole efficiency in the damage mechanisms at maximum substrate current condition where a net hole trapping is observed in the overlap region which is further screened by the large increase of interface traps in this region. As a consequence, the device suffers from a mobility reduction due to the series-resistance increase mostly in linear mode which impacts the device speed response to AC signal. Off state stressing exhibits a very similar CHC degradation behavior due to the interface traps which may represents a limitative case for the pulses shape optimisation encountered in Class-E operation. A modified reaction-diffusion modelling is proposed based on the multi-vibrational hydrogen release mechanism which matches the time dependence and saturation effect. Finally, we show that the efficiency of E-Class power amplifier is weakly affected by the series-resistance degradation.