The method of forming an epitaxial member

The method of forming an epitaxial member. The present invention provides a method of manufacturing an integrated circuit device and the integrated circuit device. The disclosed method provides a substantially defect free epitaxial member. An exemplary method includes: forming a gate structure over a substrate; forming a recess in the substrate such that the recess is interposed between the gate structure; and forming source / drain extension member in the recess. Forming source / drain extension member comprising: forming an epitaxial layer in the recesses embodiment selective epitaxial growth process, and performing a selective etch back process is performed to remove the epitaxial layer from the dislocation area.