Size-induced direct-to-indirect gap transition in GaSb/AlSb multiple quantum well structures
1986
Abstract Using excitation spectroscopy we have investigated the size-induced cross-over from direct to indirect bandstructure in GaSb/AlSb quantum wells. In samples with L z L z only the direct transition occurs. Time-resolved measurements yield a change of the carrier lifetime by about a factor of 100 at the cross-over.
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