Electrical contact for wurtzite GaN microdisks

We developed a back processing to fabricate an electrical contact of wurtzite GaN microdisk on transparent p-type GaN template. The interface welding between the GaN microdisk and p-type GaN template produced a very solid and secure epi-film contact for the electrical current passing through, with a resistance of 45.0 KΩ and threshold voltage of 5.9 V. The back processing can resolve the obstacle of electrical contacts for self-assembled wurtzite nano-devices.