MOVPE growth for the fabrication of OEICs

The authors describe structural and optical properties of InP based materials deposited on partially masked substrates (ie selective area epitaxy) and after multistage epitaxy with the aim of producing integrated device structures. A series of growth studies have been conducted with the aim of identifying the benefits and limitations of the MOVPE technique. All growths were performed in an MOVPE reactor operating at a pressure of 200 mBar and temperature of 630 degrees C. Typical growth rates ranged from 4-7 AA/sec. Reagents used were trimethyl and triethyl group III and hydride group V precursors.