Low-temperature polysilicon technology for active matrix addressing of LCDs and OLEDs

2001 
Although it has been developed for more than a decade, low temperature polysilicon technology is far from being as matureas its amorphous silicon counterpart. This is due to much more complex processes, (e.g., laser crystallisation of the activesilicon layer), that are not used at all in related industrial areas, such as the microelectronics industry.In this paper, we first present the major critical process steps of the low temperature polysilicon technology, including lasercrystallisation and MOS-type oxide deposition.In a second part, we show that ifhigh information content displays are to be fabricated with organic light emitting materials,they will certainly use a polysilicon active matrix, because ofthe inherent stability ofthis material.Keywords: Flat panel displays, polysilicon, thin film transistor, active matrix addressing, LCD, OLED.
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