Organic semiconductor device and electrode film

Provided is an organic semiconductor device which has improved performance, while suppressing defects due to contact resistance. A second electrode layer (18) of an organic semiconductor device (10) is directly formed on the other surface of an organic material layer (16) by co-deposition of a highly conductive metal having a volume resistivity of 3.0 × 10 -6 Ω·cm or less and one or more charge-transporting materials selected from the group consisting of alkaline earth metals, alkali metals, halides of alkaline earth metals, halides of alkali metals, Co oxide, Cu oxide, Mo oxide, Ni oxide, amine-based organic compounds, hydrazone-based organic compounds, stilbene-based organic compounds, star burst organic compounds, and phthalocyanine-based organic compounds. The ratio of the highly conductive metal in the second electrode layer (18) is increased with increasing distance from the organic material layer (16) so that the ratio of the highly conductive metal is lower than the ratio of the charge-transporting material(s) on the organic material layer (16) side of the second electrode layer (18) and the ratio of the highly conductive metal is higher than the ratio of the charge-transporting material(s) on the other side of the second electrode layer (18), said the other side being opposite to the organic material layer (16) side.