An indium phosphide MMIC amplifier for 180-205 GHz

This paper describes a high-performance indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for application in radioastronomy and imaging-array receivers. Implemented using coplanar waveguide, the six-stage amplifier exhibits 15 db gain, 10 dB input and output return loss, and low noise figure over the 180-205 GHz frequency range. Only one design pass was needed to obtain excellent agreement between the predicted and measured characteristics of the circuit, a unique achievement in this frequency band. The circuit is also the first 180-205 GHz amplifier designed for and successfully fabricated using TRW's standard 0.1-/spl mu/m InP HEMT process.