GeTe alloy thin film growing method adopting hot atom layer deposition technology

The invention discloses a GeTe alloy thin film growing method adopting a hot atom layer deposition technology and belongs to the technical field of semiconductor preparation. According to the GeTe alloy thin film growing method adopting the hot atom layer deposition technology, a Ge source provided with the structure shown in a chemical formula I and a Te source provided with the structure shown in a chemical formula II are adopted, and the Ge source and the Te source are applied into the hot atom layer deposition technology (T-ALD), so that a GeTe deposition layer with a shape-maintaining property is formed on a nanoscale semiconductor device. In addition, an as-deposited GeTe alloy thin film manufactured through the GeTe alloy thin film growing method is higher in resistance, that is, the as-deposited GeTe alloy thin film is higher in purity. According to the GeTe alloy thin film growing method adopting the hot atom layer deposition technology, the resistance of the manufactured GeTe alloy thin film is 1.4*105-4*105 ohm.cm, and root-mean-square roughness of the thin film is 0.7 nm.