Reduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect- transistors using hydrogen-annealed wafer and in-situ HF-vapor treatment

In this paper, n-type metal–oxide–semiconductor field-effect-transistors (nMOSFETs) of low donor-like interface traps are fabricated on hydrogen-annealed wafers (Hi-wafer) with an in-situ HF-vapor treatment. Gate oxide integrity is significantly improved in terms of drain current, transconductance, and threshold-voltage shift under stressing. We found the improvement is due to the significant reduction of donor-like interface trapping densities. This improvement becomes distinguished when both Hi-wafer and in-situ HF-vapor treatment are utilized.