Solar cell silicon-based n-type dope

A photovoltaic device comprises a first semiconductor zone (2) based on silicon-doped N-type and a second semiconductor zone (3) based on silicon-doped P-type semiconductor regions both are configured to form a PN junction. The first semiconductor region (2) is free of boron and has a dopant concentration of P type impurity is at least equal to 20% of the dopant impurity concentration N-type