Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone

Abstract We present results on the deposition and characterization of defected graphene by the chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals is thermally decomposed acetone (C 2 H 6 CO) in Ar main gas flow. The deposition takes place on (001) Si substrates at about 1150–1160 °C. We established by Raman spectroscopy the presence of single- to few- layered defected graphene deposited on two types of interlayers that possess different surface morphology and consisted of mixed sp 2 and sp 3 hybridized carbon. The study of interlayers by XPS, XRD, GIXRD and SEM identifies different phase composition: i) a diamond-like carbon dominated film consisting some residual SiC, SiO 2 etc.; ii) a sp 2 - dominated film consisting small quantities of C 60 /C 70 fullerenes and residual Si-O-, C O etc. species. The polarized Raman studies confirm the presence of many single-layered defected graphene areas that are larger than few microns in size on the predominantly amorphous carbon interlayers.