Silicon carbide epitaxial wafer manufacturing method

The present invention seeks to provide a process for producing a silicon carbide epitaxial wafer, by which a plurality of silicon carbide epitaxial layers of a given layer thickness can be accurately formed. In the present invention, a first n-type SiC epitaxial layer is formed (2) on an n-type SiC substrate (1) so that the rate of change of the impurity concentration between the n-type SiC substrate (1) and the first n type SiC epitaxial layer (2) is greater than or equal to 20%. A second n-type SiC epitaxial layer (3) is at the first n-type SiC epitaxial layer (2), so that the rate of change of the impurity between the first n-type SiC epitaxial layer (2) and the second n-type SiC epitaxial layer (3) is greater than or equal to 20%.