The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In 0.65 Ga 0.35 N epilayers has been investigated. The layers studied have been grown by high-pressure chemical vapor deposition, a growth technique that utilizes the reactor pressure as an additional processing parameter. The surface morphology analysis revealed that with the increasing V/III molar precursor ratio, the surface morphology degrades with increasing surface roughness and decreasing average grain areas. The free carrier concentration in the In 0.65 Ga 0.35 N epilayers increased with the increased group V/III molar precursor ratios in the 700-3000 range.