Thin films of FexNi1−x electroplated on silicon (1 0 0)

Abstract Fe x Ni 1− x thin films were electroplated in the constant current mode directly onto n-type Si (1 0 0) using saccharin as a leveller agent. Fe content varied between 7 and 20 at%. Current efficiency increased with current density and also with film thickness, ranging from 35% to 76%. Films with a nominal thickness of 2800 nm showed a magnetoresistance of 3.6% and a coercive field of 3.5 Oe for deposits grown at 12.6 mA/cm 2 . For x