A study on IMC morphology and integration flow for low temperature and high throughput TCB down to $10\mu \mathrm{m}$ pitch microbumps

In this paper full integration flow for a low temperature (150°C) and high throughput die to wafer bonding method is introduced for microbumps pitches down to $10 \mu \mathrm{m}$ . The impact of Co plating chemistry, Sn thickness, annealing temperature and bump diameter on CoSn 3 IMC morphology is studied in detail. Furthermore, the electrical data and cross section SEM images of the bonded samples are shown for $20 \mu \mathrm{m}$ and $10 \mu \mathrm{m}$ pitch daisy chains.