Resistivity anisotropy in ordered InxGa1−xP grown at 640 °C

The anisotropy of electrical properties in ordered InxGa1−xP epitaxial layers was studied. These samples were prepared by a low-pressure metalorganic chemical vapor phase epitaxy technique at the growth temperature of 640 °C. Resistivity measurements using a four-point-probe method have shown that samples with a low misfit value (0–1.5×10−3) are electrically uniform. For samples with higher misfit the anisotropy of resistivity markedly increases up to a maximum of 950. Comparing the results obtained from x-ray diffraction, low temperature photoluminescence, and atomic force microscopy experiments, we have shown that lattice mismatch can support the evolution and extension of the ordering effect in the InxGa1−xP layers.